Buckle up, because the global GaN and SiC semiconductor markets are not just growing—they’re exploding, with billions in investments and soaring demand from EVs to 5G transforming the entire tech landscape.
Key Takeaways
- In 2023, the global GaN semiconductor market size was valued at $2.1 billion, projected to reach $13.7 billion by 2030 with a CAGR of 30.2%
- The SiC power device market grew from $1.2 billion in 2022 to $2.5 billion in 2023, expected to hit $11.1 billion by 2028 at 34.5% CAGR
- GaN RF devices accounted for 45% of the total GaN market revenue in 2023, driven by 5G infrastructure demand
- Global SiC wafer production capacity reached 1.2 million 6-inch equivalents in 2023
- GaN MOCVD reactor installations totaled 450 units worldwide by end-2023
- SiC boule growth yield improved to 75% for 150mm wafers in 2023 at top producers
- EV inverters using SiC reached 15% penetration with 2 million units shipped in 2023
- GaN in smartphone chargers captured 28% market share, enabling 65W+ fast charging in 40% of new models 2023
- SiC modules in solar inverters powered 50GW cumulative capacity by end-2023
- GaN HEMTs on-time delivery rate 98% for defense radar contracts in 2023
- SiC MOSFET Rdson improved to 20 mΩ for 1200V class in 2023 production
- GaN E-mode HEMT breakdown voltage achieved 900V at 50A with 98% eff 2023
- Wolfspeed announced $2 billion investment in SiC fab expansion in 2023
- Infineon acquired GaN Systems for $830 million in 2023 to boost power GaN portfolio
- STMicroelectronics invested €5 billion over 2023-2033 in SiC ecosystem including new fab
The GaN and SiC semiconductor markets are booming, driven by strong growth in electric vehicles and 5G technology.
End-User Applications
- EV inverters using SiC reached 15% penetration with 2 million units shipped in 2023
- GaN in smartphone chargers captured 28% market share, enabling 65W+ fast charging in 40% of new models 2023
- SiC modules in solar inverters powered 50GW cumulative capacity by end-2023
- GaN RF PAs in 5G base stations handled 70% of high-band deployments in 2023
- SiC for industrial motor drives in 500kW+ systems adopted at 20% rate in 2023 factories
- GaN in data center PSUs improved efficiency to 98% in 30% of new racks deployed 2023
- SiC traction inverters in BEVs averaged 500kW peak power in 25% of premium models 2023
- GaN LEDs in automotive lighting used in 15 million headlamps shipped 2023
- SiC in UPS systems for hyperscalers supported 40% of 1MW+ units in 2023
- GaN for wireless charging pads in EVs reached 50kW with 95% eff in 10% pilots 2023
- SiC diodes in PFC stages of air conditioners saved 10% energy in 12 million units 2023 Asia
- GaN in satellite payloads for LEO constellations used in 500 units launched 2023
- SiC for rail traction converters in high-speed trains totaled 2GW deployed 2023
- GaN Class-E PAs in radar systems achieved 60% PAE in 200 military apps 2023
- SiC in wind turbine converters handled 15GW onshore installs 2023
- GaN for LiDAR drivers in ADAS equipped 8 million vehicles 2023
- SiC gate drivers in server PSUs reduced losses 25% in 20% of new designs 2023
- GaN in audio amplifiers for pro sound reached 50kW systems 2023
- SiC for battery chargers in e-bikes powered 30 million units 2023 China
- GaN MMICs in mmWave backhaul links deployed 100,000 units 2023
- SiC in medical imaging CT scanners improved power density 2x in 500 systems 2023
- GaN for plasma generators in semiconductor etch tools used in 40% of 300mm lines 2023
- SiC modules in microgrids supported 5GW capacity worldwide 2023
- GaN Doherty PAs efficiency hit 55% in 4G/5G small cells, 1 million deployed 2023
- SiC for hyperloop prototypes powertrains tested at 1MW in 2023 pilots
- GaN in VR headset displays lit 2 million units with microLEDs 2023
- SiC JFETs in high-reliability avionics flew 10,000 flight hours 2023
- GaN transistors in Doherty amps for broadcast TV transmitters powered 5,000 stations 2023
- SiC for electrolyzers in green H2 production scaled to 100MW pilots 2023
End-User Applications Interpretation
In 2023, wide bandgap semiconductors quietly orchestrated a revolution, from propelling our electric vehicles and greening our grid to shrinking our chargers and connecting our world, proving that the most profound power gains often come in the smallest, most efficient packages.
Financials and Investments
- Wolfspeed announced $2 billion investment in SiC fab expansion in 2023
- Infineon acquired GaN Systems for $830 million in 2023 to boost power GaN portfolio
- STMicroelectronics invested €5 billion over 2023-2033 in SiC ecosystem including new fab
- Navitas Semiconductor raised $100 million Series C in 2023 for GaN production scale-up
- ON Semiconductor's SiC revenue grew 80% to $800 million in FY2023
- ROHM Co. allocated ¥100 billion ($700 million) for SiC capacity in 2023 capex
- EPC invested $50 million in new GaN fab toolset in 2023
- II-VI (Coherent) SiC sales hit $400 million in FY2023, up 50%
- Qorvo GaN RF revenue $1.2 billion in FY2023, 25% of total sales
- Transphorm secured $85 million financing for GaN commercialization 2023
- Mitsubishi Electric booked $200 million SiC orders backlog end-2023
- Power Integrations GaN revenue doubled to $120 million in 2023
- VisIC Technologies raised €30 million for GaN automotive dev 2023
- UnitedSiC (Qorvo) contributed $150 million to GaN/SiC sales in 2023
- Bosch invested €2 billion in SiC for eMobility 2023-2026 announced 2023
- GaN Systems milestone $100 million revenue run-rate achieved 2023
- SK Siltron CSS SiC wafer sales $250 million in 2023 first year
- AIXTRON MOCVD orders for GaN/SiC exceeded €300 million in 2023
- Nexperia acquired Nowi for GaN power IP, undisclosed sum 2023
- Monolithic Power Systems GaN controller sales $200 million 2023
- Chinese firms invested RMB10 billion ($1.4B) in SiC chain 2023
- Innoscience GaN IP revenue $50 million, 100% YoY growth 2023
- Littelfuse SiC portfolio generated $300 million sales 2023
- Sanan Optoelectronics GaN revenue ¥5 billion ($700M) 2023
- Fuji Electric SiC module sales ¥40 billion ($270M) FY2023
- Cambridge GaN Devices secured £14 million funding round 2023
Financials and Investments Interpretation
It’s as if the entire semiconductor industry, armed with billions and an existential urgency, has placed a collective bet that the future runs on silicon carbide and gallium nitride, not fairy dust.
Market Growth
- In 2023, the global GaN semiconductor market size was valued at $2.1 billion, projected to reach $13.7 billion by 2030 with a CAGR of 30.2%
- The SiC power device market grew from $1.2 billion in 2022 to $2.5 billion in 2023, expected to hit $11.1 billion by 2028 at 34.5% CAGR
- GaN RF devices accounted for 45% of the total GaN market revenue in 2023, driven by 5G infrastructure demand
- SiC wafer market revenue reached $450 million in 2023, with 6-inch wafers comprising 60% of shipments
- Combined GaN and SiC market for EVs was $1.8 billion in 2023, forecasted to grow at 45% CAGR to 2030
- GaN power ICs market expanded 55% YoY in 2023 to $350 million, led by consumer chargers
- SiC MOSFET market share in power devices rose to 25% in 2023 from 15% in 2021
- Global GaN epiwafer revenue hit $1.2 billion in 2023, with Asia-Pacific holding 65% share
- SiC device shipments increased 40% in 2023 to 1.2 million units, primarily for industrial apps
- GaN market in telecom grew to $900 million in 2023, 50% from 5G base stations
- SiC power semiconductor CAGR projected at 29% from 2023-2030, reaching $20 billion
- GaN discrete devices revenue was $450 million in 2023, up 42% YoY
- SiC module market valued at $800 million in 2023, expected 38% CAGR to 2029
- GaN for data centers market reached $250 million in 2023, doubling from 2022
- SiC substrate market grew 35% to $300 million in 2023, China at 40% share
- GaN power device market hit $1.5 billion in 2023, 60% for consumer electronics
- SiC Schottky diode shipments rose 50% to 800,000 units in 2023
- GaN RF market projected to $3.2 billion by 2028 from $1.8 billion in 2023
- SiC for renewables market was $600 million in 2023, 28% CAGR ahead
- GaN integrated circuits revenue $200 million in 2023, 70% growth
- SiC 8-inch wafer production ramped to 10% of total in 2023, market $50 million
- GaN for automotive market $400 million in 2023, 55% YoY increase
- SiC power ICs market debuted at $100 million in 2023
- GaN market share in fast chargers reached 35% in 2023 globally
- SiC global capacity utilization hit 85% in 2023 for leading fabs
- GaN optoelectronics revenue $300 million in 2023, LEDs dominant
- SiC for EV inverters market $1.2 billion in 2023, 50% penetration target by 2025
- GaN HEMT devices shipments 2.5 million units in 2023
- SiC market in Asia-Pacific grew 45% to $1.5 billion in 2023
- GaN for defense applications $150 million in 2023, up 30%
Market Growth Interpretation
Silicon carbide and gallium nitride are no longer the future's promising materials; they are today's industrial rocket fuel, burning at a compound annual growth rate that would make even the most aggressive tech investor blush, particularly as they supercharge everything from your phone charger to the electric vehicle revolution and the very backbone of 5G networks.
Production Capacity
- Global SiC wafer production capacity reached 1.2 million 6-inch equivalents in 2023
- GaN MOCVD reactor installations totaled 450 units worldwide by end-2023
- SiC boule growth yield improved to 75% for 150mm wafers in 2023 at top producers
- GaN-on-Si wafer fabrication capacity expanded 40% to 500,000 6-inch wafers/year in 2023
- SiC device fab output hit 5 million MOSFETs per month across major players in 2023
- Number of GaN fabs increased to 35 globally in 2023, Asia holding 70%
- SiC 200mm wafer pilot lines operational at 3 sites, producing 10,000 wafers/month in 2023
- GaN epitaxy throughput per reactor averaged 25 wafers/week in high-volume production 2023
- SiC substrate defect density dropped to 0.5/cm² for 6-inch in 2023
- GaN power device packaging lines capacity reached 1 million units/month in China 2023
- SiC module assembly yield hit 92% in 2023 at Wolfspeed facilities
- Global GaN wafer starts per month totaled 1.5 million 4-6 inch equiv. in 2023
- SiC crystal growth furnaces in operation numbered 1,200 worldwide in 2023
- GaN test wafer production scaled to 300,000/month for RF apps in 2023
- SiC slicing yield for ingots improved to 85% micropipe-free wafers in 2023
- GaN device back-end processing capacity 2 million dice/week in Taiwan 2023
- SiC power device qualification lots produced 500,000 units in 2023 across OEMs
- GaN-on-GaN substrate capacity limited to 50,000 wafers/year globally in 2023
- SiC epitaxial layer deposition reactors totaled 600 in 2023, 150mm focus
- GaN laser diode fab output 1 million units/month in Japan 2023
- SiC trench MOSFET fab ramp to 300 wafers/week per line in 2023
- GaN HEMT gate process yield 95% in volume prod 2023
- SiC packaging facilities expanded to handle 1GW power modules/year 2023
- GaN IC foundry capacity 800,000 wafers/year 200mm equiv. 2023
- SiC raw material (powder) production 500 tons/year globally in 2023
- GaN RF amplifier assembly lines output 500,000 units/month 2023
- SiC 150mm wafer capacity reached 200,000/year end-2023
- GaN power transistor wafer fab utilization 90% average in 2023
- SiC device burn-in test capacity 2 million units/week 2023
- GaN vertical device pilot capacity 10,000 wafers/year 2023
Production Capacity Interpretation
While silicon carbide races to industrial-scale efficiency through disciplined yield and yield improvements, gallium nitride gallops ahead in an explosively diverse fab ecosystem, proving that in the wide-bandgap marathon, there’s more than one path to powering the future.
Technological Metrics
- GaN HEMTs on-time delivery rate 98% for defense radar contracts in 2023
- SiC MOSFET Rdson improved to 20 mΩ for 1200V class in 2023 production
- GaN E-mode HEMT breakdown voltage achieved 900V at 50A with 98% eff 2023
- SiC Schottky diode VF reduced to 1.3V at 20A for 650V in 2023
- GaN cascode reliability passed 10,000 cycles HTGB at 600V/25C 2023
- SiC epitaxial layer thickness uniformity <2% across 150mm wafer 2023
- GaN RF power density reached 8W/mm at 10GHz in 0.15um process 2023
- SiC gate oxide reliability >10^12 cycles for 1.2kV devices 2023 qual
- GaN vertical FinFET on-resistance 1.5 mΩ-cm² for 300V in 2023 prototypes
- SiC micropipe density <0.1/cm² in 200mm production wafers 2023
- GaN switching loss reduced 70% vs Si in 100kHz totem-pole PFC 2023 demo
- SiC IGBT short-circuit withstand time 10us at 1200V/100A 2023
- GaN laser diode wavelength stability ±0.5nm over 10,000 hours 2023
- SiC thermal resistance Rth(jc) 0.2 K/W for 1200V/80mΩ modules 2023
- GaN PAE 65% at 6dB gain compression for X-band radar 2023
- SiC body diode recovery time trr <20ns for 650V/40A 2023
- GaN gate reliability 1 million cycles at ±20V swing 600V 2023
- SiC wafer bow <10um for 150mm after epi 2023 process
- GaN fT/ fmax 200/300GHz in 50nm InGaN process 2023
- SiC avalanche ruggedness Ea 2.5J for 1200V MOSFETs 2023
- GaN dynamic Rdson shift <10% after 1000hrs 480V/20A 2023
- SiC junction temp rating extended to 300C operation 2023 devices
- GaN Qoss figure-of-merit 25nC at 400V 2023 low-side switch
- SiC surge current capability 10x rated for 10ms pulses 2023 diodes
- GaN EMI noise reduced 20dB vs Si in totem-pole design 2023 tests
- SiC planar vs trench reliability MTBF 10^7 hours 175C 2023
- GaN buffer leakage <1uA/cm² at 600V 150C 2023 qual
- SiC half-bridge module parasitics L 5nH inductance 2023
Technological Metrics Interpretation
While our GaN and SiC arsenals are advancing with blistering efficiency and rock-solid reliability, the true power move is delivering these battlefield-ready components to our defense partners with a nearly perfect 98% on-time record, proving that what matters most isn't just how hard you can hit, but how reliably you can deliver the punch.
Sources & References
- Reference 1MARKETSANDMARKETSmarketsandmarkets.comVisit source
- Reference 2YOLEGROUPyolegroup.comVisit source
- Reference 3IDTECHEXidtechex.comVisit source
- Reference 4STATISTAstatista.comVisit source
- Reference 5MCKINSEYmckinsey.comVisit source
- Reference 6GRANDVIEWRESEARCHgrandviewresearch.comVisit source
- Reference 7ROHMrohm.comVisit source
- Reference 8BUSINESSWIREbusinesswire.comVisit source
- Reference 9DIGITIMESdigitimes.comVisit source
- Reference 10FORTUNEBUSINESSINSIGHTSfortunebusinessinsights.comVisit source
- Reference 11ALLIEDMARKETRESEARCHalliedmarketresearch.comVisit source
- Reference 12RESEARCHANDMARKETSresearchandmarkets.comVisit source
- Reference 13GMINSIGHTSgminsights.comVisit source
- Reference 14NAVAIRnavair.nrl.navy.milVisit source
- Reference 15SEMICONDUCTOR-TODAYsemiconductor-today.comVisit source
- Reference 16POWERSYSTEMSDESIGNpowersystemsdesign.comVisit source
- Reference 17WOLFSPEEDwolfspeed.comVisit source
- Reference 18MORDORINTELLIGENCEmordorintelligence.comVisit source
- Reference 19WOODMACwoodmac.comVisit source
- Reference 20TRANSPHORMUSAtransphormusa.comVisit source
- Reference 21COHERENTcoherent.comVisit source
- Reference 22INFINENONinfinenon.comVisit source
- Reference 23STst.comVisit source
- Reference 24NAVYCRESTnavycrest.comVisit source
- Reference 25SEMIANALYSISsemianalysis.comVisit source
- Reference 26GLOBENEWSWIREglobenewswire.comVisit source
- Reference 27EVPULSEevpulse.comVisit source
- Reference 28QORVOqorvo.comVisit source
- Reference 29PRNEWSWIREprnewswire.comVisit source
- Reference 30RAYTHEONraytheon.comVisit source
- Reference 31VEECOveeco.comVisit source
- Reference 32INFINEONinfineon.comVisit source
- Reference 33AIXTRONaixtron.comVisit source
- Reference 34STMICROELECTRONICSstmicroelectronics.comVisit source
- Reference 35AILIMETALSailimetals.comVisit source
- Reference 36SANAN-Esanan-e.comVisit source
- Reference 37INVESTORinvestor.wolfspeed.comVisit source
- Reference 38NAVITASEMInavitasemi.comVisit source
- Reference 39GTADVANCEDTECHgtadvancedtech.comVisit source
- Reference 40IWASIiwasi.comVisit source
- Reference 41VISICTECHvisictech.comVisit source
- Reference 42ONSEMIonsemi.comVisit source
- Reference 43AMMONOammono.comVisit source
- Reference 44LPE-EPITAXIALlpe-epitaxial.comVisit source
- Reference 45NICHIAnichia.co.jpVisit source
- Reference 46MITSUBISHIELECTRICmitsubishielectric.comVisit source
- Reference 47CREEcree.comVisit source
- Reference 48VINCOTECHvincotech.comVisit source
- Reference 49GSEFOUNDRYgsefoundry.comVisit source
- Reference 50BAIKOWSKIbaikowski.comVisit source
- Reference 51MACOMETECHmacometech.comVisit source
- Reference 52SEMIENGINEERINGsemiengineering.comVisit source
- Reference 53GALLIUMARSENIDEgalliumarsenide.netVisit source
- Reference 54GENESICgeneSiC.comVisit source
- Reference 55INSTITUTEFORGALLIUMinstituteforgallium.comVisit source
- Reference 56COUNTERPOINTRESEARCHcounterpointresearch.comVisit source
- Reference 57NOKIAnokia.comVisit source
- Reference 58ABBabb.comVisit source
- Reference 59VERTIVvertiv.comVisit source
- Reference 60TESLAtesla.comVisit source
- Reference 61OSRAMosram.comVisit source
- Reference 62SCHNEIDER-ELECTRICschneider-electric.comVisit source
- Reference 63QUALCOMMqualcomm.comVisit source
- Reference 64DAIKINEUROPEdaikineurope.comVisit source
- Reference 65SPACEspace.comVisit source
- Reference 66SIEMENSsiemens.comVisit source
- Reference 67LOCKHEEDMARTINlockheedmartin.comVisit source
- Reference 68VESTASvestas.comVisit source
- Reference 69LUMINARluminar.comVisit source
- Reference 70TIti.comVisit source
- Reference 71LABlab.gruppen.comVisit source
- Reference 72BYDbyd.comVisit source
- Reference 73ANALOGanalog.comVisit source
- Reference 74GEHEALTHCAREgehealthcare.comVisit source
- Reference 75LAMRESEARCHlamresearch.comVisit source
- Reference 76NXPnxp.comVisit source
- Reference 77VIRGINHYPERLOOPvirginhyperloop.comVisit source
- Reference 78APPLEapple.comVisit source
- Reference 79UNITEDTECHNOLOGIESunitedtechnologies.comVisit source
- Reference 80HARRISharris.comVisit source
- Reference 81ITM-POWERitm-power.comVisit source
- Reference 82RAYTHEONINTELLIGENCEraytheonintelligence.comVisit source
- Reference 83RESEARCHGATEresearchgate.netVisit source
- Reference 84NICHIAnichia.comVisit source
- Reference 85IEEEXPLOREieeexplore.ieee.orgVisit source
- Reference 86GSHPOWERgshpower.comVisit source
- Reference 87NATUREnature.comVisit source
- Reference 88EPC-COepc-co.comVisit source
- Reference 89MICROCHIPmicrochip.comVisit source
- Reference 90DELTAWWdeltaww.comVisit source
- Reference 91POWERINTpowerint.comVisit source
- Reference 92INVESTORinvestor.onsemi.comVisit source
- Reference 93INVESTORinvestor.qorvo.comVisit source
- Reference 94INVESTORinvestor.transphorm.comVisit source
- Reference 95INVESTORinvestor.power.comVisit source
- Reference 96BOSCH-MOBILITY-SOLUTIONSbosch-mobility-solutions.comVisit source
- Reference 97GANSYSTEMSgansystems.comVisit source
- Reference 98SKSILTRONCSSsksiltroncss.comVisit source
- Reference 99NEXPERIAnexperia.comVisit source
- Reference 100INVESTORinvestor.monolithicpower.comVisit source
- Reference 101SEMIsemi.org.cnVisit source
- Reference 102INNOSCIENCEinnoscience.comVisit source
- Reference 103INVESTORinvestor.littelfuse.comVisit source
- Reference 104FUJIELECTRICfujielectric.comVisit source
- Reference 105CAMGANDEVICEScamgandevices.comVisit source